METAL GATE FERMI-THRESHOLD FIELD EFFECT TRANSISTORS

摘要

A Fermi-threshold field effect transistor includes a metal gate (28') rather than a contra-doped polysilicon gate. The metal gate can lower the threshold voltage of the Fermi-FET without degrading other desirable characteristics of the Fermi-FET. The metal gate may be a pure metal gate or a metal alloy gate such as a metal silicide gate. The metal gate preferably includes metal having a work function between that of P-type polysilicon and N-type polysilicon.