Silicon-on-insulator field effect transistor e.g. for VLSI technology and memory

摘要

The silicon-on-insulator field effect transistor has a gate on an insulating layer (10) with associated source and drain zones of one conductor type on an insulator (2) and a semiconducting zone or body (7,8) of the other conductor type between the source and drain zones. A trench (9) in the semiconducting zone of the other conducting type is filled with the gate-electrode material (11) which is capacitively or directly coupled to the semiconducting zone of the other conductor type.