Polyhedral p-doped silicon macromolecule used as semiconductor device barrier layer

摘要

A p-doped silicon macromolecule has a polyhedral structure in which each corner silicon atom of an inner polyhedron is associated with a corner dopant atom of an outer polyhedron. A p-doped silicon macromolecule with a polyhedral (preferably hexahedral or dodecahedral) structure in which each silicon atom is associated with one dopant atom, the dopant atoms of each molecule being located at the corners of an outer polyhedron and the silicon atoms of each molecule being located at the corners of an inner polyhedron which is face-parallel to the outer polyhedron. Independent claims are also included for: (i) production of the above macromolecule by dopant injection into a monatomic silicon vapor enclosed by a rotating magnetic field, followed by cooling to below the crystallization limit; (ii) equipment for carrying out the above process; and (iii) a bipolar transistor including the above p-doped silicon macromolecule. Used as an electron-deficient control element of a semiconductor, e.g. a barrier layer crystal of an np-diode or of an npn-transistor (claimed), especially a multichannel transistor.