| 摘要 |
<p>The present invention relates to a method for forming solid-state nano-structures, wherein said method comprises radiating the surface of a material with an ion flow at an angle different from the normal. The period of the structure thus obtained is determined by selecting the type of ions and by adjusting the temperature value of the material to be treated, the ion energy value and the value of their angle of incidence. In order to generate the ion flow, this method comprises using a substance the ions of which form a dielectric compound in the presence of a semi-conductor material.</p> |
