| 发明名称 |
Process for making a polysilicon thin film transistor |
| 摘要 |
<p>A process for producing a polysilicon thin film transistor includes hydrogenating the thin film transistor and depositing an atomic hydrogen-containing layer on the thin film transistor. The thin film transistor is characterized by leakage current rates as low as 10-13A.</p> |
| 申请公布号 |
EP0569470(B1) |
申请公布日期 |
1999.04.07 |
| 申请号 |
EP19920904576 |
申请日期 |
1992.01.08 |
| 申请人 |
MINNESOTA MINING AND MANUFACTURING COMPANY |
发明人 |
TRAN, NANG, T.;KEYES, MICHAEL, P. |
| 分类号 |
H01L21/20;H01L21/265;H01L21/30;H01L21/324;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 地址 |
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