Junction field effect transistor and method of fabricating the same

摘要

The production of the device involving performing a first diffusion for obtaining a p-type zone (12) and a subsequent n<+> type diffusion to obtain the gate (16). The depth of this latter diffusion with respect to the preceding one defines the channel zone (20) of the JFET. The doping and thickness of the channel (20) make the JFET structure obtainable directly with CMOS technology avoiding the addition of otherwise necessary photolithographic and implantation steps.