| 摘要 |
Hydrogenated amorphous carbon mainly composed of sp3 structure is prepared by adding hydrogen to carbon or decomposing hydrogenated carbon gas, and then rapidly cooling the mixed or decomposed gas on a substrate. The hydrogenated amorphous carbon is irradiated with X rays to excite electrons on the 1s shells of carbon atoms. The carbon atoms are rendered to a state excited with 2+ ion due to Auger effect caused by the exciation, so as to form atomic vacancies and interlattice atomic couples. The hydrogenated amorphous carbon is then annealed, and carbon atoms are rearranged to rotated triangular pattern. Thus, diamond good of crystallinity useful as a high-temperature semiconductor device, ultraviolet laser diode or protective film can be synthesized at a relatively low temperature and a low pressure. The process is applicable for the growth of a diamond single crystal thin film on a single crystal substrate such as amorphous carbon, silicon, or a Group III-V or II-VI compound semiconductor.
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