发明名称 |
Method for fabricating a high bias metal oxide semiconductor device |
摘要 |
A method for fabricating a high bias metal oxide semiconductor device includes using a trench structure instead of the conventional field oxide layer, constructing a structure with a vertical voltage gradient and performing punch implantation and threshold voltage implantation under a doped N- region and a doped P- region to increase the channel length.
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申请公布号 |
US5891770(A) |
申请公布日期 |
1999.04.06 |
申请号 |
US19980098397 |
申请日期 |
1998.06.17 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LEE, JIA-SHENG |
分类号 |
H01L21/762;H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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