| 发明名称 |
Method for forming a semiconductor device having a heteroepitaxial layer |
| 摘要 |
A method for forming a relaxed semiconductor layer (12) includes forming a strained semiconductor layer on a substrate (11). The strained semiconductor layer has a different lattice constant than the substrate (11). Without exposing the strained semiconductor layer to an oxidizing ambient, the strained semiconductor layer is relaxed using thermal stress.
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| 申请公布号 |
US5891769(A) |
申请公布日期 |
1999.04.06 |
| 申请号 |
US19980046559 |
申请日期 |
1998.02.27 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
LIAW, HANG MING;BURT, CURTIS LEE;HONG, STELLA Q.;STEIN, CLIFFORD P. |
| 分类号 |
H01L29/78;H01L21/20;H01L21/336;H01L21/338;H01L29/10;H01L29/20;(IPC1-7):H01L21/338 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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