| 发明名称 |
Formation of a bottle shaped trench |
| 摘要 |
A method for forming a bottle shaped trench 20 in a semiconductor substrate 10 includes reactive ion etching a trench having a tapered top portion 25 in the semiconductor device and continuing to reactive ion etch while increasing the temperature of the semiconductor device to impart a reentrant profile 22 to the trench.
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| 申请公布号 |
US5891807(A) |
申请公布日期 |
1999.04.06 |
| 申请号 |
US19970937526 |
申请日期 |
1997.09.25 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MULLER, K. PAUL;RANADE, RAJIV M.;SCHMITZ, STEFAN |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/8242;H01L27/108;(IPC1-7):H01L21/306;B44C1/22;C03C25/06 |
主分类号 |
H01L21/302 |
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