发明名称 |
GAS PURIFIER FOR SEMICONDUCTOR PLANT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a gas purifier for a semiconductor plant by which extremely fine particles and impurity ions in gaseous starting material can be removed. SOLUTION: In a gas purifier for a semiconductor plant for purifying gas used in the semiconductor plant, a gas path formed inside the purifier itself is constituted of plural unit cells 1 each consisting of a dust collecting electrode 2 and a discharge electrode 3 which are arranged in parallel. In each unit cell 1, corona discharge is generated so that extremely fine particles and impurity ions in the gas are collected on the inner peripheral surface of the dust collecting electrode 2.</p> |
申请公布号 |
JPH1190162(A) |
申请公布日期 |
1999.04.06 |
申请号 |
JP19970260412 |
申请日期 |
1997.09.25 |
申请人 |
DAIDO HOXAN INC |
发明人 |
YOSHINO AKIRA;YOKOYAMA TAKASHI;KIYAMA HIROMI |
分类号 |
B08B13/00;B01D53/34;H01L21/205;(IPC1-7):B01D53/34 |
主分类号 |
B08B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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