发明名称 GAS PURIFIER FOR SEMICONDUCTOR PLANT
摘要 <p>PROBLEM TO BE SOLVED: To provide a gas purifier for a semiconductor plant by which extremely fine particles and impurity ions in gaseous starting material can be removed. SOLUTION: In a gas purifier for a semiconductor plant for purifying gas used in the semiconductor plant, a gas path formed inside the purifier itself is constituted of plural unit cells 1 each consisting of a dust collecting electrode 2 and a discharge electrode 3 which are arranged in parallel. In each unit cell 1, corona discharge is generated so that extremely fine particles and impurity ions in the gas are collected on the inner peripheral surface of the dust collecting electrode 2.</p>
申请公布号 JPH1190162(A) 申请公布日期 1999.04.06
申请号 JP19970260412 申请日期 1997.09.25
申请人 DAIDO HOXAN INC 发明人 YOSHINO AKIRA;YOKOYAMA TAKASHI;KIYAMA HIROMI
分类号 B08B13/00;B01D53/34;H01L21/205;(IPC1-7):B01D53/34 主分类号 B08B13/00
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