| 发明名称 |
Contamination free source for shallow low energy junction implants |
| 摘要 |
A method for forming a P-type region in a semiconducting crystalline substrate by ion implantation is disclosed, wherein the implant specie is an ionic molecule that contains titanium and boron.
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| 申请公布号 |
US5891791(A) |
申请公布日期 |
1999.04.06 |
| 申请号 |
US19970863993 |
申请日期 |
1997.05.27 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU, GURTEJ S.;ANJUM, MOHAMMED |
| 分类号 |
H01L21/265;H01L21/285;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
| 代理机构 |
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