| 摘要 |
A semiconductor memory device comprises memory cell blocks M1-Mn disposed for respective I/O pads and a redundant memory cell block MR, a programmable circuit programmable based on a failed information for controlling transfer switches T1 and T2 to couple each of the I/O pads with corresponding memory cell block or with adjacent memory cell block by excepting a failed memory cell block and including the redundant memory cell block based on the failed information. In a roll call test mode, the I/O pads coupled with adjacent memory cell blocks output a fixed value regardless of data stored in the memory cell blocks to notify a failed memory cell block for facilitating failure analysis.
|
