发明名称 |
Charged particle beam exposure method and apparatus |
摘要 |
In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.
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申请公布号 |
US5892237(A) |
申请公布日期 |
1999.04.06 |
申请号 |
US19970815436 |
申请日期 |
1997.03.11 |
申请人 |
FUJITSU LIMITED |
发明人 |
KAWAKAMI, KENICHI;YASUDA, HIROSHI;YAMADA, AKIO;OHKAWA, TATSURO;NAKANO, MITSUHIRO;SAITO, ATSUSHI;OOAE, YOSHIHISA |
分类号 |
H01J37/304;H01J37/317;(IPC1-7):H01J37/304 |
主分类号 |
H01J37/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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