| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring an average crystallite diameter of a thin film of a material having a crystal structure formed in a minute region of <=1 μm square and a device for manufacturing the thin film. SOLUTION: In the method for measuring the average crystallite diameter, a sample of the material having absorption in UV region and the crystal structure is irradiated with electron beams, energy-loss spectrum of reflected electrons is measured and the crystallite diameter is obtained by using correlation between spectrum data and average crystallite diameter of the sample. Used data appeared in the electron energy-loss spectrum are, for instance, (1) energy value of a plasmon peak and relative intensity of the plasmon peak to an elastic scattering peak or its shape, (2) energy value of a peak resulted from π→π*transition and relative intensity of the π→π* peak to the elastic scattering peak or its shape or (3) a shape of a background of a continuous spectrum formed by inelastic scattering electrons or relative intensity of a point to the elastic scattering peak. |
