发明名称 PLASMA TREATMENT OF ORGANIC BASE MATERIAL AND FORMATION OF METALLIC LAYER ON ORGANIC BASE MATERIAL
摘要 PROBLEM TO BE SOLVED: To prevent the contamination of an org. base material without sputtering electrodes in spite of large discharge electric power by subjecting the org. base material to a plasma treatment by using the electrodes installed with Ti, V, Y, Zr, Nb, Mo, W, Ta and their oxides or ntirides on the discharge surfaces. SOLUTION: At atmosphere gas, such as inert gas or nitrogen, is introduced into a vacuum vessel 1 and is regulated to a pressure of about 10<-1> to 10 Pa. The metals of >=1 kinds among the Ti, V, Y, Zr, Nb, Mo, W, Ta and their oxides or ntirides 13 are installed on the discharge surface of the cathode electrode 10 for planar magnetron sputter vapor deposition in this vacuum vessel 1. A high-frequency voltage is then impressed on the electrode 10 from a power source 17 to form plasma between this electrode and an electrode roll 3, by which the org. base material 2, such as long-sized polyimide film, on this roll is subjected to the plasma treatment. The metals, etc., 13 described above are hardly sputtered and do not contaminate the org. base material 2. The vacuum vapor deposition of the metals is thereafter executed, by which metallic layers may be formed on the surface of the org. base material 2 with a good adhesion property.
申请公布号 JPH1192916(A) 申请公布日期 1999.04.06
申请号 JP19970254607 申请日期 1997.09.19
申请人 NITTO DENKO CORP 发明人 UEDA ZENICHI;SEKI MASAHARU;KAWAZOE SHOZO
分类号 B29C71/04;B01J19/08;B29K79/00;B29L7/00;B32B15/08;C08J7/00;C08J7/06;C23C14/02;C23C14/06;C23C14/08;C23C14/14;C23C14/20;C23C14/24;H05K3/38;(IPC1-7):C23C14/20 主分类号 B29C71/04
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