Method of forming buried oxygen layer using MeV ion implantation

摘要

A method of manufacturing a wafer having a buried oxide layer at a desired depth is disclosed. The method includes the steps of implanting a standard species ion at an energy at or above 1 MeV into an oxygen-rich wafer to form a defect region at the desired depth in the oxygen rich wafer. The wafer is annealed such that oxygen in the wafer is gettered to the defect region to form the buried oxide layer.