N-drive p-common surface emitting laser fabricated on n+ substrate

摘要

The present invention provides a n-drive surface emitting laser comprised of an active region, a first mirror region having a first conductivity type, a second mirror region having a second opposite conductivity type, the first and second mirror regions being located on opposite sides of the light generation region, a buffer region having a second conductivity type, and a substrate having a first conductivity type. In the preferred embodiment the first conductivity type is n-type, thus the present invention provides a method of forming an n-drive semiconductor laser on an n-type substrate. Contact is made to the p-type mirror region via a tunnel junction formed by degeneratively doping the areas of the substrate region and the buffer region which abut each other. The tunnel junction is reverse biased so that current is injected through the degeneratively doped p-n junction formed by the n+ substrate and the p-type conducting layer.