Plasma enhanced CVD apparatus and process, and dry etching apparatus and process

摘要

A plasma enhanced CVD apparatus includes a processing chamber, a pumping system for evacuating the processing chamber, a gas inlet system for introducing a source gas, and a plasma generating electrode provided in the processing chamber for depositing a film on a substrate in the processing chamber by plasma generated by electrical power supplied to the plasma generating electrode; the plasma generating electrode has two terminals, one of the terminals is connected to a radio frequency power source and other of the terminals is grounded through an electrode potential controlling system; and the processing chamber is grounded through an inner wall potential controlling system. The present invention is further directed to a plasma enhanced CVD process, a dry etching apparatus, and a dry etch process.