发明名称 Gate voltage modulation for transistor fault conditions
摘要 A power device control system includes a power device having an input gate and first and second output terminals, a controller, and a gate driver for supplying current to the input gate of the power device, comparing a voltage difference between the first and second output terminals, and providing a comparator signal to the controller if the voltage difference is greater than or equal to a predetermined maximum voltage difference. The controller is capable of providing a command signal to the gate driver and pulse width modulating the command signal upon receiving a comparator signal from the gate driver to gradually switch off the power device. The control system can further include a current sensor coupled between one of the first and second output terminals and the controller for supplying a current signal and an integrated current signal to the controller. The control system can be capable of variably pulse width modulating the command signal, and, in one embodiment, the modulation process includes varying on/off switching of the command signal to increase a percentage of off time during subsequent periods of modulation.
申请公布号 US5892643(A) 申请公布日期 1999.04.06
申请号 US19970888825 申请日期 1997.07.07
申请人 GENERAL ELECTRIC COMPANY 发明人 ESSER, ALBERT ANDREAS MARIA;SILVERTHORN, LEE BURTON;KEISTER, LYLE THOMAS
分类号 H03K17/082;H03K17/16;(IPC1-7):H02H7/00 主分类号 H03K17/082
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