| 摘要 |
A sense amplifier for a nonvolatile writeable memory is described. The sense amplifier has a preamplifier coupled to receive a signal from a cell of the nonvolatile writeable memory. The preamplifier uses a grounded-gate p-channel metal-oxide semiconductor input stage. A differential input latch is coupled to the preamplifier output. The differential input latch uses a pair of cross-coupled inverters. A logic device is coupled to the differential input latch output and provides the sense amplifier output signal. The logic device reduces the offset in the differential input latch and provides an output indicative of one of a number of states or voltage levels of the cell. |
