| 摘要 |
In a semicondutor laser of the BH-type comprising a lateral current blocking structure which is constituted of an n-p-n-p- or n-SI-n-p-sequence of layers (5, 9, 11, 3), located on both sides of a buried active region, one or more thin layers (13, 15) are inserted between the second n-doped layer and the second p-doped layer. The thin, extra layers (11, 13) are p-doped and consist of alternatingly materials having a high bandgap and a low bandgap. These thin layers provide a larger forward voltage drop at moderate high current densities and thereby give a better current confinement in the laser, what in turn gives a higher optical output power and a smaller deviation of the output power/current characteristic thereof from a linear behaviour. |
