| 摘要 |
The method for fabricating a semiconductor integrated circuit device disclosed includes the steps wherein an active region is defined so as to be surrounded by an insulating film on a silicon substrate, a surface of the active region and a semiconductor layer that extends underneath the insulating film are changed to an amorphous state by implantation of ions from oblique angles, a metal film is formed over the silicon substrate, and a metal silicide layer is formed by a thermal-treatment causing the metal film and silicon in the amorphous state to react with each other. In this way, it is possible to form a sufficiently thick silicide layer even on a narrow line width diffusion layer. |
