Semiconductor component with separating structure for high HV strength

摘要

On the substrate (1) is formed an epitaxial region (3) of first conductivity, comprising the first trough (2). A low dopant density second trough (4) of second conductivity is so formed in the epitaxial region that it reaches the first trough in an appropriate region. The first trough is in two parts with intermediate spacing, and so is the second trough of such design as to extend to an outer, peripheral section of the first through parts in the second trough may be incorporated a switching element.