发明名称 Magnetooptisches Speichermedium und Verfahren zu seiner Herstellung
摘要 A magneto-optic memory medium including a first dielectric layer having a first main surface and a second main surface; a second dielectric layer for covering the first main surface of the first dielectric layer; and a magneto-optic memory layer for covering the second dielectric layer. The first dielectric layer is formed of an oxide having a refractive index in the range of 2.4 or more and 3.5 or less, and the second dielectric layer is formed of a material containing no oxygen. The magneto-optic memory medium is produced by the steps of forming a first layer by performing reactive sputtering in an atmosphere of a first sputter gas using a material containing a first element as a target; switching the first sputter gas to a second sputter gas; forming a second layer on the first layer by performing reactive sputtering in an atmosphere of the second sputter gas using a material containing the first element as a target; and forming a magneto-optic memory layer on the second dielectric layer. <IMAGE>
申请公布号 DE69320511(T2) 申请公布日期 1999.04.01
申请号 DE1993620511T 申请日期 1993.03.12
申请人 SHARP K.K., OSAKA, JP 发明人 IKETANI, NAOYASU, TENRI-SHI, NARA-KEN, JP;KATAYAMA, HIROYUKI, NARA-SHI, NARA-KEN, JP;NAKAYAMA, JUNICHIRO, SHIKI-GUN, NARA-KEN, JP;OHTA, KENJI, KITAKATSURAGI-GUN, NARA-KEN, JP
分类号 G11B11/10;G11B7/257;G11B11/105;(IPC1-7):G11B11/10 主分类号 G11B11/10
代理机构 代理人
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