Halbleitersensor mit einem Grundkörper und wenigstens einem Verformungskörper

摘要

The invention relates to a semiconductor detector with a base structure (4) and at least one deformable body (8), wherein the deformable body (8) consists of a semiconductor substrate which is doped with a dopant displaying a first type of conductivity. Piezo resistors (14) doped with a dopant displaying an opposite type of conductivity are located in the deformable body (8). The deformable body (8) is in contact with a medium in at least one partial area. The inventive semiconductor detector is characterized in that the partial area has a dopant concentration that is lower than the dopant concentration in the area located between said partial area and the piezo resistor (14).