METHOD FOR PRODUCING A GROOVED SEMICONDUCTOR STRUCTURE WITH MIS-TRANSISTORS

摘要

The invention relates to a method for producing a semiconductor structure on the main surface of a substrate (1), comprising a plurality of grooves (2,3,4) with corresponding crowns (5a, 5b, 5c, 5d), bottoms (2a, 3a, 4a) and walls (2b, 2c; 3b, 3c; 4b, 4c). The inventive method consists of the following steps: spacers (6a, 6b; 6c, 6d; 6e, 6f) are formed on the groove walls; first conduction areas are formed in specific groove bottoms (2a, 3a, 4a) and/or in the groove crowns (5a, 5b, 5c, 5d); a stop oxide (8) is formed, whereby said oxide (8) is provided with a set thickness in the first conduction areas either in the groove bottoms (2a, 3a, 4a) and/or in the groove crowns (5a,5b,5c,5d); and the spacers (6a, 6b; 6c; 6d; ) are etched away, whereby the thickness of the stop oxide (8) in the first conduction areas in the groove bottoms (2a, 3a, 4a) and/or in the groove crowns (5a, 5b, 5c, 5d) reaches a given value once the spacers have been etched away (6a, 6b; 6c; 6d; 6e, 6f).