Integrierte Schaltungsanordnung mit mindestens zwei unterschiedlich dotierten Gebieten, die elektrisch miteinander verbunden sind, und Verfahren zu deren Herstellung

摘要

The invention concerns an integrated circuit comprising at least two zones (Ga1, Ga2) provided with low resistance structures (St1, St2), for example in silicide, connected after an intermediate oxide covering the zones has been produced, by means of a metal contact (K). Since no step of the process is carried out at high temperature, after the metal contact has been produced, there is no diffusion of doping agent between the two zones (Ga1, Ga2) via the low resistance structures (St1, St2).