Direct-wafer-bond silicon-oxide-silicon substrate production

摘要

A direct-wafer-bond Si/SiO2/Si substrate is produced by etching and filling trenches in a device wafer before it is bonded to a handling wafer and thinned. A direct-wafer-bond Si/SiO2/Si substrate is produced by (a) etching trenches (7) in the front face (5) of a silicon device wafer (3); (b) applying an insulating layer (8) into the trenches and on the surface of the wafer (3); (c) filling the trenches with polysilicon and optionally covering the surface with silicon; (d) applying the wafer front face (5) to the front face (4) of a silicon support wafer (2); (e) heat treating the assembled wafers (2, 3); and (f) thinning the device wafer (3) at its back face (6).