| 摘要 |
<p>A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources (50, 60, 70) wherein the liquid precursor source (50) with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold (30) connected to a processing chamber, with the point (32) of introduction being spaced away from the processing chamber (10). A second liquid precursor source (60), having a vapor pressure lower than the first liquid precursor source (50), is then introduced in vaporized form into the manifold (30) at a point (34) closer to the processing chamber (10). This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold (30) at a point closer to the processing chamber (10) than the previous liquid precursor source. A temperature gradient may then be maintained along the manifold (30) with the temperature gradually increased in a direction toward the processing chamber (10) while still mitigating premature boiling of the liquid precursor sources (50, 60, 70) prior to vaporization, or condensation of already vaporized liquid precursor sources or components. <MATH></p> |
