发明名称 |
Method of fabrication semiconductor chips with silicide and implanted junctions |
摘要 |
A method of fabricating a semiconductor device includes the steps of providing a semiconductor chip (10) with a memory area (22) and a logic area (26). The memory area (22) and the logic area (26) each have gate structures (50) formed therein. The step of sequentially forming silicided junctions (44) in the logic area (26) and implanted junctions in the memory area (26) is also included. <IMAGE> |
申请公布号 |
EP0905770(A1) |
申请公布日期 |
1999.03.31 |
申请号 |
EP19980114246 |
申请日期 |
1998.07.30 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
PREIN, FRANK |
分类号 |
H01L21/28;H01L21/822;H01L21/8234;H01L21/8239;H01L27/04;H01L27/088;H01L27/105 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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