发明名称 Miniaturization of a semiconductor chip
摘要 A source electrode, gate electrode, drain electrode, and a gate bus bar connected to said gate electrode are formed on a semiconductor chip. A field effect transistor unit constructed on the semiconductor chip is made up of three adjacent fingers each extending from the source electrode, gate electrode, and drain electrode. The source electrode is formed on the outer edge of the semiconductor chip from the obverse to the reverse surfaces of the semiconductor chip. <IMAGE>
申请公布号 EP0905791(A2) 申请公布日期 1999.03.31
申请号 EP19980118168 申请日期 1998.09.25
申请人 NEC CORPORATION 发明人 KOHNO, JUNKO
分类号 H01L29/41;H01L21/338;H01L23/482;H01L29/417;H01L29/78;H01L29/812;(IPC1-7):H01L29/812 主分类号 H01L29/41
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