| 摘要 |
In a method of manufacturing an optical semiconductor element including at least the steps of forming a mask having a stripe-like gap or interval on a semiconductor substrate, epitaxially growing a semiconductor ridge including an active layer on only an exposed gap portion of the semiconductor substrate, and epitaxially growing a semiconductor cladding layer to cover the ridge, the thickness of the active layer is substantially the same as the width of the active layer. <IMAGE> |
