Independently addressable vertical cavity surface emitting laser arrays with buried selectively oxidized native oxide aperture

摘要

The present invention provides an independently addressable, high density, vertical cavity surface emitting laser/LED structure formed by a lateral oxidation process. The aperture of the laser structure is formed by either lateral wet oxidation or by both selective layer intermixing and lateral wet oxidation from a semi-annular groove etched in the laser structure. The same VCSEL array structure can be used for resonant vertical cavity LED array structures.