发明名称 Method of manufacturing optical semiconductor device
摘要 <p>In a method of manufacturing an optical semiconductor device having a semiconductor substrate, an optical waveguide formed by a semiconductor layer is formed on the semiconductor substrate by the use of the selective metal-organic vapor phase epitaxy including source materials. The source materials are intermittently supplied in the selective metal-organic vapor phase epitaxy. <IMAGE> <IMAGE></p>
申请公布号 EP0905798(A2) 申请公布日期 1999.03.31
申请号 EP19980118177 申请日期 1998.09.25
申请人 NEC CORPORATION 发明人 SAKATA, YASUTAKA
分类号 H01L21/205;B82Y10/00;B82Y20/00;B82Y40/00;G02B6/13;H01S5/00;H01S5/22;H01S5/227;(IPC1-7):H01L33/00;H01S3/19 主分类号 H01L21/205
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