发明名称 |
Epitaxial growth rate varying method for side surface of semiconductor pattern |
摘要 |
An improved epitaxial growth rate varying method for a side surface of a semiconductor pattern capable of controlling a growth rate of a side surface of a semiconductor pattern by controlling the amount of CCl4 gas supplied when forming an epitaxial layer on a patterned GaAs substrate in a metalorganic chemical deposition method, thus fabricating a desired quantum wire, and which is characterized by controlling a side-surface growth rate of an epitaxial layer in accordance with the CCl4 doping gas flow rate while an epitaxial layer is formed on a patterned GaAs substrate in a metalorganic chemical deposition method and in achieving a desired substantial flatness.
|
申请公布号 |
US5888294(A) |
申请公布日期 |
1999.03.30 |
申请号 |
US19960609323 |
申请日期 |
1996.03.01 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
MIN, SUK-KI;KIM, MOO SUNG;KIM, YONG |
分类号 |
H01L21/205;C30B25/02;H01L21/20;H01L29/06;H01S5/00;(IPC1-7):C30B25/14 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|