| 摘要 |
A thin film transistor and a simplified manufacturing method thereof, which results in enhanced charge mobility. The thin film transistor includes: a substrate; a gate electrode on said substrate; a gate insulating layer on said substrate and said gate electrode; a doped semiconductor layer, on the gate insulating layer, which is split into a first and second portion; a first metal layer on the first doped semiconductor portion; a second metal layer on the second doped semiconductor portion; and a top semiconductor layer in a gap formed by the first and second metal layer: the first doped semiconductor portion, the second doped semiconductor portion, and the insulating layer.
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