| 摘要 |
A semiconductor device comprises a first conductive layer, an insulating layer formed on the first conductive layer, a plurality of contact holes formed through the insulating layer, a second conductive layer consisting of a plurality of pillar-shaped contacts each respectively formed in a corresponding one of the contact holes, the pillar-shaped contacts each respectively having a projecting portion projecting above the insulating layer, and a third conductive layer consisting of a plurality of conductive portions each respectively formed on the projecting portion of a corresponding one of the pillar-shaped contacts in a selectively growing manner. |
