| 摘要 |
PROBLEM TO BE SOLVED: To increase quantum effects of an LED by using so that a high band gap upper p-type cladding layer reduces carrier overflow. SOLUTION: An n-type gallium arsenide semiconductor is used as a substrate, while an electrode 20 is placed thereunder. An n-type AlGaInP cladding layer 22 is on a substrate 21, and an active AlGaInP layer 23 is grown thereon. A high bang gap limiting layer is on the layer 23 and has an upper electrode 26. When compared with conventional examples, a p-type GaP layer 25 is used as a cladding layer instead of a conventional AlGaInP layer and P-type GaP window layer. The p-GaP layer 25 as the cladding layer has a higher energy gap. The GaP layer 25 has difference of 100 meV compared with the conventional AlGaInP layer. The GaP layer 25 is used as the cladding layer to increase limiting energy over 60 meV, and quantum efficiency of an LED of AlGaInP can be increased. |
