MANUFACTURE OF SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To easily manufacture a semiconductor laser having a non-uniform effective period of grating on a waveguide. SOLUTION: A single pitch grating 20 is formed on the main surface of a substrate 10 using an interferential exposing method. Then, a pair of line symmetrical and fixed width selective growth masks 22 are formed on the substrate 10 where the grating is formed with a prescribed distance between them. The width of the above-mentioned selective growth masks is formed by changing into saw teeth shape which linearly decreases from the fixed width in the period longer than the single pitch of the grating 20 along the extending direction of the selective growth masks 22. Then, a waveguide layer 26a is selectively grown on the intermask selective growth region 24 located between the pair of selective growth masks 22 on the substrate 10.