发明名称 |
Semiconductor structure having two levels of buried regions |
摘要 |
Integrated circuits suitable for high-performance applications, especially mixed signal products that have analog and digital sections, are fabricatable from a semiconductor structure having two levels of buried regions. In a typical embodiment lower buried regions of opposite conductivity types are situated along a lower semiconductor interface between a semiconductive substrate and an overlying lower semiconductive layer. Upper buried regions of opposite conductivity type are similarly situated along an upper semiconductor interface between the lower semiconductive layer and an overlying upper semiconductive layer. The upper semiconductive layer contains P-type and N-type device regions in which transistor zones are situated. The semiconductor structure is normally configured so that at least one of each of the P-type and N-type device regions is electrically isolated from the substrate. Complementary bipolar transistors can be integrated with complementary field-effect transistors in the structure.
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申请公布号 |
US5889315(A) |
申请公布日期 |
1999.03.30 |
申请号 |
US19950393622 |
申请日期 |
1995.02.23 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
FARRENKOPF, DOUGLAS R.;MERRILL, RICHARD B.;SAHA, SAMAR;BREHMER, KEVIN E.;GADEPALLY, KAMESH;CACHARELIS, PHILIP J. |
分类号 |
H01L21/761;H01L21/822;H01L21/8249;H01L27/02;H01L27/06;H01L27/088;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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