| 摘要 |
A semiconductor memory device is disclosed, in which a memory region which can not be used due to existence of defective bit line is reduced. In a DRAM of a double word line system, when there is a defective bit line 103 in a certain block thereof, only a memory region 104 in a right or left portion of the block to which the defective bit line 103 belongs is made invalid and a region on the other side is made valid. In this case, clusters are constructed with the valid memory region by converting the uppermost bits of a row address and the uppermost bits of a column address by means of an address conversion circuit.
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