| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an ion-implanting device and a method of manufacturing a semiconductor device using this ion-implanting device, whereby a semiconductor substrate having concentration dispersion in a surface is used, the semiconductor device of small characteristic dispersion can be formed. SOLUTION: This ion-implanting device is provided with a means controlling a scan speed of an ion beam 1 scanning a surface of a semiconductor substrate 5 in accordance with impurity concentration i a surface of the semiconductor substrate 5. A method of manufacturing this semiconductor device includes a process, using the ion-implanting device, by controlling a scan speed of the ion beam 1, implanting an impurity ion of implantating amount corresponding to impurity concentration distribution of the semiconductor substrate 5. More specifically, in the case of same conductive type of implanted impurity to the semiconductor substrate 5, when impurity concentration in a surface of the semiconductor substrate 5 is high, the scan speed of the ion beam 1 is increased, and when the impurity concentration is low, the scan speed is controlled so as to be decreased. In the case of the conductive type being different, when the impurity concentration in a surface of the semiconductor substrate 5 is high, the scan speed of the ion beam 1 is decreased, and when the impurity concentration is low, the scan speed is controlled so as to be quickened.</p> |
