| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress parasitic capacity of a bit line by arranging a sense amplifier in an adjacent position to a memory cell array. SOLUTION: This memory is provided with a memory cell array 1 having memory cells, a sense amplifier 17 provided in the adjacent position to the memory cell array and sensing data stored in a memory cell, a bit line control circuit 6' controlling writing data in a memory cell, and a data input/output buffer 7 outputting data sensed at the sense amplifier and supplying writing data externally supplied to the bit line control circuit.</p> |
