| 摘要 |
A method of manufacturing a field effect transistor according to the present invention is disclosed including the steps of preparing a semiconductor substrate; forming an insulating film for use as high concentration on the semiconductor substrate; forming an insulating film for use as low concentration on the insulating film for use as high concentration; performing a heat treatment on the insulating films to thereby diffuse impurities; forming high concentration regions and low concentration region in the surface of the semiconductor substrate; forming mesa and electrodes on the upper surface and side of the semiconductor substrate; and selectively etching the insulating film for use as low concentration so as to expose a predetermined portion of the upper surface of the semiconductor substrate, to thereby form a gate electrode so as to be in contact with the low concentration region of the predetermined portion.
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