| 摘要 |
The present invention provides a device simulation method comprising at least the steps of: inputting a geometry of a semiconductor device, a donor and an acceptor impurity concentrations at each point inside the semiconductor device and also terminal voltages of the semiconductor device (step S101); setting initial values by obtaining electron concentrations n, and nJ and also hole concentrations pI and pJ with respect to given points I and J respectively inside the semiconductor device and also a potential at each point (step S102); obtaining a voltage difference PSI dd across a prescribed segment dd along a segment IJ connecting the points I and J (step S103); calculating an electron current density JeIJ of the segment IJ by an equation JeLJ=CeIxA( PHI edd)-CeJxA(- PHI edd) using a constant CeI dependent on the electron concentration nJ, a constant CeJ dependent on the electron concentration nJ, and a voltage difference ( PHI edd= PSI dd/NVe) across the segment dd normalized by an electron's thermal voltage (NVe=kxTe/(-q)) (step S104); calculating a hole current density JhIJ of the segment IJ by an equation JhIJ=ChIxA( PHI hdd)-ChJxA(- PHI hdd) using a constant ChI dependent on the hole concentration pI, a constant ChJ dependent on the hole concentration pJ, and a voltage difference (( PHI hdd= PSI dd/NVh) across the segment dd normalized by a hole's thermal voltage (NVh=kxTh/q) (step S105); and outputting a terminal current, where A( PHI )=1/(exp( PHI )+1). The present invention provides also a device simulator that can perform this device simulation method for fabricating semiconductor devices, and a storage medium storing the program to perform this device simulation method. The present invention further provides a device fabrication method employing the device simulation method.
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