| 摘要 |
PROBLEM TO BE SOLVED: To mount a semiconductor integrated circuit device by using a package of a various state, by incorporating a fuse made of a metal layer formed by using the same manufacturing process as that of a second wiring layer from an uppermost layer of a multilayered wiring layer. SOLUTION: A wiring layer 18 and a fuse 19 are simultaneously formed on a semiconductor substrate 1. In this case, after a metal layer of an aluminum layer or the like is, for example, deposited on the substrate 1 by using a sputtering method, a patterned wiring layer 18 and the fuse 19 are simultaneously formed by using lithography and selectively etching technology. The fuse 19 can be formed of a metal layer made of the same material as that of the layer 18. Since the fuse 19 is the metal layer made of the same material as that of the layer 18 as the same material as that of the layer 18 of a second wiring layer from an uppermost layer of a multilayered wiring layer. Thus, the semiconductor integrated circuit device can be mounted by using a package of various states of the package or the like using a CCB connecting technology. |
