| 摘要 |
PROBLEM TO BE SOLVED: To complete photolithographic process for forming a resist film in a single process to reduce a manufacturing cost by patterning a transparent conductive film together with a metal electrode and an a-Si film in first etching and patterning the metal electrode and the a-Si film in second etching. SOLUTION: Etching is done using a stepped film 10 to pattern a transparent electrode 10 together with a laminated a-Si film 3 and a metal electrode 4. An ashing process for removing the resist film stops when a thin resist film 10b is eliminated. The resist film at a part 10a remains as a resist film 10'. The resist film 10' is used to perform etching again and pattern the a-Si film 3 and the metal electrode 4 simultaneously. A protective film 6 is printed between elements to prevent short-circuiting between adjacent transparent electrodes 2 or between the transparent electrode 2 and the metal electrode 4, and conductive paste is applied to connect the metal electrode 4 of the element A with the transparent electrode 2 of the element B. |
