| 摘要 |
A dynamic random access memory having a high capacitance capacitor is described. Field oxide areas on the surface of a semiconductor substrate surround device areas including field effect devices, gate dielectric and gate electrode structures on the substrate in the device areas. Source/drain structures associated with the gate electrode structures lie within the device areas of the semiconductor substrate. An insulating layer covers the device areas. A capacitor structure comprises a bottom electrode formed by the central cylindrical portion of a polysilicon layer which electrically contacts the source/drain structures through an opening in the insulating layer, a storage node overlying the insulating layer, the storage node having an E-shape with three prongs wherein the prongs point upward from the central cylindrical portion of the polysilicon layer, a capacitor dielectric layer overlying all surfaces of the storage node, and a top plate electrode layer overlying the capacitor dielectric layer on all surfaces of the storage node to complete the capacitor.
|
