Method of manufacturing semiconductor memory device

摘要

A storage node electrode formed of doped amorphous silicon is provided on a silicon substrate. Silicon crystal grains are formed on the surface of the storage node electrode by annealing it in the atmosphere including PH3. A capacitor insulating film and a cell plate electrode are formed to cover the surface of the storage node electrode including silicon crystal grains. Larger silicon crystal grains are accordingly provided on the surface of the storage node electrode, resulting in increased capacitance of the capacitor.